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I D25
MegaMOS TM FET
N-Channel Enhancement Mode
IXTH 12N90
IXTM 12N90
V DSS = 900 V
= 12 A
R DS(on) = 0.90 ?
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXTH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
900
900
V
V
V GS
V GSM
I D25
I DM
P D
T J
T JM
T stg
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
± 20
± 30
12
48
300
-55 ... +150
150
-55 ... +150
V
V
A
A
W
° C
° C
° C
TO-204 AA (IXTM)
G
D (TAB)
M d
Weight
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Maximum lead temperature for soldering
300
° C
1.6 mm (0.062 in.) from case for 10 s
Features
International standard packages
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
Switch-mode and resonant-mode
power supplies
V DSS
V GS = 0 V, I D = 3 mA
900
V
Motor controls
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
2
4.5
± 100
250
1
V
nA
μ A
mA
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
Easy to mount with 1 screw (TO-247)
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.90
?
(isolated mounting screw hole)
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
91593E(5/96)
1-4
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